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S. Hsu, Low pressure chemical vapor deposition of silicon carbide thin films from hexamthydisilane, Thin Solid Films. 252 (1994) 13-18. G. S. Chun. Growth and structure of chemical vapor deposited silicon carbide form methyltrichlorosilane and hydrogen in the temperature range of 1100 to 1400 °C, J. Vac. Sci. Technol. A. 6 (1988) 5-8. 42 Advanced Ceramics and Novel Processing [19] F. Loumagne, F. Langlais, R. Naslain, S. Schamm, D. Dorignac, J. Sevely. Physicochemical properties of SiC-based ceramics deposited by low pressure chemical vapor deposition from CH3SiCl3-H2, Thin solid Films.

F. Zhang, R. Tu, T. Goto, Densification, microstructure and mechanical properties of SiO2-cBN composites by spark plasma sintering, Ceram. Int. 38 (2012) 351-356. Key Engineering Materials Vol. jp Keywords: high-speed; deposition temperature (Tdep); β-SiC; deposition rate (Rdep); Halide CVD Abstract. Polycrystalline β-SiC thick film with mm-scaled thickness was deposited on a graphite substrate using a gaseous mixture of SiCl4 + CH4 and H2 at temperatures ranging from 1573 to 1823 K by chemical vapor deposition.

At Tdep = 1823 K, only (220) diffraction peak can be observed, which indicates that the film exhibited totally <110> preferred orientation. At Tdep = 1573 K, the film showed a strong <111> preferred orientation. Figure 2 shows the effect of Tdep on Rdep and preferred orientation in the Arrhenius format comparing with those of literatures [9–18]. It can be seen that β-SiC film tends to exhibit <111> preferred orientation at lower temperature region (< 1500 K) as closed marks, whereas the <110> preferred orientation with open marks was observed at higher temperature region (> 1500 K).

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Advanced ceramics and novel processing

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